Gertner Institute Summer School on Nano Medicine, June 2016

Gertner Institute Summer School on Nano Medicine, June 2016

Chaoul 8th Annual Workshop, Hagoshrim 2012

Chaoul 8th Annual Workshop, Hagoshrim 2012

Chaoul 9th Annual Workshop, Nazareth 2013

Chaoul 9th Annual Workshop, Nazareth 2013

XIN inauguration ceremony, May 2014

XIN inauguration ceremony, May 2014

Raith 150 Ultra High Precision E-Beam Lithography and Metrology System

r150

Description:

The Raith150 represents a new and innovative generation of electron-beam writers for R&D application, and close the gap between the SEM conversions and expensive production equipment. The Raith 150 is capable of a resolution of about 50 nm.

Specifications:


Features & Info sheet:
  • Used for direct write and mask making.

  • Ultra high resolution, thermal field emission (Schottky) source.

  • GEMINI (the registered trademark of LEO Electronenmikroskopie GmbH) electron optics: 8 kV beam booster giving state-of-the-art low kV performance, beam energy selectable between 200 V – 30 kV.

  • 6'' laser interferometer stage with electrostatic chuck and automated sample leveling using 3-point contact with piezo electric devices.

  • Wide range of selectable writing field sizes (from 0.5 um to 800 um).

  • Fixed Beam Moving Stage (FBMS), a zero stitching error writing mode for the seamless exposure of extended structures.

  • Fast Pattern Generator with up to 10 MHz writing speed, minimum dwell time increments approach 2 ns.

  • Flexible dual PC operated control of system, lithography patterning and metrology runs. * Pattern generation: GDSII hierarchical editor with dose assignment. Flexible graphical editor for “any shape design”. Fully integrated software with proximity correction and postprocessing.

  • Metrology functions: linewidth and long-range measurements with laser interferometer resolution of 2 nm. Magnification: 20 to 900,000 times.