Processes

 

Unless otherwise noted, processes can be performed either by lab personnel (for extra fee) or by trained users.

For most processes the user must be familiar with the equipment to operate it by him/herself.

 

Cleaning

 

  • With solvents
  • With acid and basic solutions (RCA, Piranha, Nanostrip)

 

Photolithography

 

Contact lithography using MA6 and MJB3 Karl Suss Mask Aligners:

  • Mask sizes: 3"x3", 4"x4", 5"x5", 7"x7"
  • Substrate sizes: small pieces, wafers 3", 4", 6", 8" diameter (for 8" wafers exposed area will be only 6")
  • Direct laser writing on big substrates
  • Nanoimprint lithography (S.E.T. FC-150)

AZ Resists protocols

AZ Resists spin curves (AZ - 4562) New!!!

SU8 Data Sheets (with recommended process by Microchem):

SU8 2000 series

SU8 3000 series

Futurrex data sheets

 

PR1-12000A1

PR1-4000A1

 

Photomask Preparation

 

Mask preparation by Heidelberg Instruments DWL66 Laser Writer, 1 micron resolution, 4"x4" and 5"x5" Soda Lime or Quartz Low Reflective Chrome photomasks.

 

Film deposition

 

  • PVD by e-beam evaporation, Ion beam sputtering, and by RF and DC Sputtering.
  • PECVD
  • Electroplating

Machine

Available materials

 

e-gun (nano CR)

Au, Ag, Pt, Pd, Cu, ***Al, Ti, Ni, Cr, Co, Mo, Nb**

Au, Ti; Cr- constant,

Ag, Pt, Pd, Al, Ni -replaceable

e-gun (glovebox)

Au, Ag, Pt, Pd, Cu, Al, Ti, Ni, Cr, Co, Mo, Nb**

No load lock

Edwards

Au, Ti, Cr, Sn, Al, NiCr, Cu, Mo, Nickel Pulver.

Au, Cu, Ti, Cr,  - frequently used,

 

Penta magnetron sputter

Ti, Au, Al, Ag, Ta, TiN, Al2O3.

 

MRC (lab 301)

Au, Ag, Ti, Ni, Cr, Co, CF2, Ta, W, TiN, TaN, TiO2, Si, Si3N4, SiO2, SiO, ITO×2.

 

IBS

Au, Ag, Ti, Ni, Cr, Cu, Al, Nb, Ta, W, SiO2, Si-intr, Si-p type, Mn (86%Cu+12%Mn+2%Ni), *Al2O3

 
  • Al2O3 can only be deposited with a staff member
  • Nb in e-beam evaporation is available temporarily and will not be purchased again after fully used
  • *** Al is temporary not available in Nano e-gun evaporator

 

Etching and machining

 

  • Chemical wet etching of various films
  • Anisotropic Si wet etching
  • Plasma Etching of SiO2, Si3N4, Photoresist films, Quartz and Fused Silica bulk samples by HDP/RIE Nextral 860. Sample size: from small pieces to 8" wafers
  • DRIE of Si by Bosch process in ICP DRIE PlasmaTherm SLR 770 machine
  • Etching of small Si features for nanophotonics by RIE process
  • Photoresist ashing
  • FIB etching
  • Laser micromachining of various materials

 

Measurements

 

  • Profile/Step height
  • Optical (and confocal) Microscopes
  • Spectroscopic Ellipsometer

 

Dicing

 

Dicing of samples up to 8" diameter by Disco DAD 3350 dicing saw.

Tel Aviv University, P.O. Box 39040, Tel Aviv 6997801, Israel
UI/UX Basch_Interactive