RIE NEXTRAL
Manufacturer and model:
NEXTRAL 860 HDP RIE.
Description:
Various high and low densities Fluorine chemistry-based plasma Reactive-ion etchers (RIE) for insulators, semimetals and semiconductor materials (crystalline, glasses and ceramics).
Specification:
- Plasma potential: <5V (accurate control over ion energy).
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Heat transfers through helium pressure between devices and cathode.
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Si etching: 10 µm/min.
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The typical etching rate of silicon: ~15 nm/min.
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The typical etching rate of silicon oxide is ~25 nm/min.
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The typical etching rate of silicon nitride is 20 nm/min.
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Width measurements during usage.
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Optical control of thickness.
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Process gas available - H2, He, Ar, SF6, CF3, CH4
Location:
Engineering Cleanroom, Wolfson building of Electrical Engineering.
Tool Owner:
Erez Benjamin (erezbenj@mail.tau.ac.il).
Tool Trainer:
Erez Benjamin (erezbenj@mail.tau.ac.il).
*Independent work will only be approved after significant experience has been accumulated