RIE NEXTRAL

RIE NEXTRAL
RIE NEXTRAL

Manufacturer and model:

NEXTRAL 860 HDP RIE.

 

Description:

Various high and low densities Fluorine chemistry-based plasma Reactive-ion etchers (RIE) for insulators, semimetals and semiconductor materials (crystalline, glasses and ceramics).

 

Specification:

  • Plasma potential: <5V (accurate control over ion energy).
  • Heat transfers through helium pressure between devices and cathode.
  • Si etching: 10 µm/min.
  • The typical etching rate of silicon: ~15 nm/min.
  • The typical etching rate of silicon oxide is ~25 nm/min.
  • The typical etching rate of silicon nitride is 20 nm/min.
  • Width measurements during usage.
  • Optical control of thickness.
  • Process gas available - H2, He, Ar, SF6, CF3, CH4


Location:

Engineering Cleanroom, Wolfson building of Electrical Engineering.

 

Tool Owner:

Erez Benjamin (erezbenj@mail.tau.ac.il).

 

Tool Trainer:

Erez Benjamin (erezbenj@mail.tau.ac.il).

*Independent work will only be approved after significant experience has been accumulated

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