RIE NEXTRAL

Manufacturer and model:

NEXTRAL 860 HDP RIE.

Description:

Various high and low densities Fluorine chemistry-based plasma Reactive-ion etchers (RIE) for insulators, semimetals and semiconductor materials (crystalline, glasses and ceramics).

Specification:

• Plasma potential: <5V (accurate control over ion energy).
• Heat transfers through helium pressure between devices and cathode.
• Si etching: 10 µm/min.
• The typical etching rate of silicon: ~15 nm/min.
• The typical etching rate of silicon oxide is ~25 nm/min.
• The typical etching rate of silicon nitride is 20 nm/min.
• Width measurements during usage.
• Optical control of thickness.
• Process gas available - H₂, He, Ar, SF₆, CF₃, CH₄

​Location:

Engineering Cleanroom, Wolfson building of Electrical Engineering.

Tool Owner:

Erez Benjamin (erezbenj@mail.tau.ac.il).

Tool Trainer:

Erez Benjamin (erezbenj@mail.tau.ac.il).

*Independent work will only be approved after significant experience has been accumulated