Technology Capabilities

Mask Fabrication:  

Direct laser writing - <1.0 µm line width resolution, Up to 7” photo-masks, 4” & 5” standard, Soda lime/Quartz, Automatic Chrome etcher

 

Lithography:

Micron features - Photolithography

Nanometer features - E-beam lithography, Ion-beam lithography, Nanoimprint lithography

Nanoimprinting - Thermal and UV imprinting (Alignment accuracy: ± 1µm, Substrates: up to 4”, Dip station, Automated polymer dispenser), Additional applications (Flip chip bonding, D2W, D2D bonding, MEMS packaging)

 

Deposition:   Further Information

Thin Film - Elements - Au, In, Cr, Al, Ti, Ni, Ag, Pt, Ta, Pd, Cu, Mg, Mo, Nb, Co, Fe, C, Sn, Si, W and more; Compounds - Al2O3, AlN, HfO2, SiO2, SiC,  SiNx,  SiOxNy, Ta2O5, TaN, TiO2, TiN, ZrO2, ZnO, MgOx, MgFx, ITO, Manganin and more

Physical Vapor Deposition - E-Beam/Thermal Evaporators, Sputters

Plasma Enhanced Chemical Vapor Deposition - PECVD capacitively coupled plasma reactor for deposition of low stressed silicon nitride, silicon dioxide and silicon oxynitride thin films

Atomic Layer Deposition - For growth of thin conformal layers with thickness control down to atomic precision (~ 3A), Deposited Materials:  Al2O3, TiO2, Ta2O5, HfO2, ZnO, TiN,  TaN,  AlN,  Pt

Plasma Etching:

Dry Etching – Various high and low densities Fluorine chemistry-based plasma Reactive-ion etchers (RIE) for insulators, semimetals, and semiconductor materials (crystalline, glasses and ceramics). Deep Silicon Etcher for High aspect ratio (HAR) micro-nano features as well as for fast isotropic silicon wafer thinning 

Plasma Ashers – Device and wafer surface cleaning treatments procedures, removal of organic residuals and native oxides  

 

Ion Beam Milling:

AJA ATC – K&R type beam generator, providing large area collimated beam of neutralized ions, for physical sputtering of almost all materials, with automatic control of the incident angle between beam and substrate holder

 

Thermal treatment:

Rapid Thermal Processing - Base pressure is 10-6 Torr; Gases: N2, O2, Ar and Forming Gas.  Max temperature is 1100oC, minimum pulse width: 1s

Thermal processing vacuum oven - Base pressure is 10-3 Torr, Gases: N2, O2, Ar; Max temperature is 700oC (for short thermal treatment <0.5hours) and 450oC (for prolonged processes)

 

Back-End:

Dicing - for cut a wide set of wafers such as Silicon, Sapphire, Quartz, Silicon Carbide, etc.   

Wire/Ball bonding -  ± 0.5 µm placement accuracy; ± 1 µm post-bond accuracy

Laser Micromachining - Femto-second pulse laser for direct sublimation of all materials, 3 laser wavelengths (UV, VIS NIR), Stage precision 1µm

 

Characterization Capabilities:

Surface Profilometry – Stylus profilometer and Confocal Microscope for measurements of surface roughness, film thickness and wafer stress analysis

HR Scanning Electron Microscopy – Sub-nanometer resolution under low energy electron beam and low vacuum conditions for all samples, including insulating and magnetic materials. The state-of-the art sample analysis, using the widest set of Secondary and Backscattered electron detectors, EDS capabilities and STEM operation mode

Atomic Force Microscopy – Surface mapping with atomic resolution of surface roughness, mechanical material constants (such as Young modulus, elasticity, etc.), electrical material parameters (such as surface potential, electron affinity, work function, etc.)  The capability to couple the AFM cantilever engine with the Raman spectroscopy probe adds the possibility of precise surface mapping of chemical content in investigated samples

Optical Spectroscopy – Ellipsometry, Spectrometry, covers the widest wavelength range from UV 200 nanometers (UV) up to 20 microns (LWIR)

Basic Electrical - 4-point probe, I-V measurements, C-V measurements

 

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