Processes
Unless otherwise noted, processes can be performed either by lab personnel (for extra fee) or by trained users.
For most processes the user must be familiar with the equipment to operate it by him/herself.
Cleaning
- With solvents
- With acid and basic solutions (RCA, Piranha, Nanostrip)
Photolithography
Contact lithography using MA6 and MJB3 Karl Suss Mask Aligners:
- Mask sizes: 3"x3", 4"x4", 5"x5", 7"x7"
- Substrate sizes: small pieces, wafers 3", 4", 6", 8" diameter (for 8" wafers exposed area will be only 6")
- Direct laser writing on big substrates
- Nanoimprint lithography (S.E.T. FC-150)
Notes for the Photolithography users
AZ Resists spin curves (AZ - 4562) New!!!
SU8 Data Sheets (with recommended process by Microchem):
Futurrex data sheets
Photomask Preparation
Mask preparation by Heidelberg Instruments DWL66 Laser Writer, 1 micron resolution, 4"x4" and 5"x5" Soda Lime or Quartz Low Reflective Chrome photomasks.
Film deposition
- PVD by e-beam evaporation, Ion beam sputtering, and by RF and DC Sputtering.
- PECVD
- Electroplating
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Machine |
Available materials |
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e-gun (nano CR) |
Au, Ag, Pt, Pd, Cu, ***Al, Ti, Ni, Cr, Co, Mo, Nb** |
Au, Ti; Cr- constant, Ag, Pt, Pd, Al, Ni -replaceable |
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e-gun (glovebox) |
Au, Ag, Pt, Pd, Cu, Al, Ti, Ni, Cr, Co, Mo, Nb** |
No load lock |
|
Edwards |
Au, Ti, Cr, Sn, Al, NiCr, Cu, Mo, Nickel Pulver. |
Au, Cu, Ti, Cr, - frequently used,
|
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Penta magnetron sputter |
Ti, Au, Al, Ag, Ta, TiN, Al2O3. |
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MRC (lab 301) |
Au, Ag, Ti, Ni, Cr, Co, CF2, Ta, W, TiN, TaN, TiO2, Si, Si3N4, SiO2, SiO, ITO×2. |
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IBS |
Au, Ag, Ti, Ni, Cr, Cu, Al, Nb, Ta, W, SiO2, Si-intr, Si-p type, Mn (86%Cu+12%Mn+2%Ni), *Al2O3 |
- Al2O3 can only be deposited with a staff member
- Nb in e-beam evaporation is available temporarily and will not be purchased again after fully used
- *** Al is temporary not available in Nano e-gun evaporator
Etching and machining
- Chemical wet etching of various films
- Anisotropic Si wet etching
- Plasma Etching of SiO2, Si3N4, Photoresist films, Quartz and Fused Silica bulk samples by HDP/RIE Nextral 860. Sample size: from small pieces to 8" wafers
- DRIE of Si by Bosch process in ICP DRIE PlasmaTherm SLR 770 machine
- Etching of small Si features for nanophotonics by RIE process
- Photoresist ashing
- FIB etching
- Laser micromachining of various materials
Measurements
- Profile/Step height
- Optical (and confocal) Microscopes
- Spectroscopic Ellipsometer
Dicing
Dicing of samples up to 8" diameter by Disco DAD 3350 dicing saw.
