Dr. Pini Shekhter, Ph.D.
Dr. Pini Shekhter holds a BSc’s in both chemistry and materials engineering from the Technion as well as a PhD in materials engineering from the Technion.
Pini Specializes in the development and characterization of different types of materials. Before joining WAMRC, Pini worked in the development of materials and processes in the defense and civil industry.
Selected Publications
- Shekhter, D. Schwendt, Y. Amouyal, T. F. Wietler, H. J. Osten and M. Eizenberg, "Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd2O3", J. Appl. Phys. 120, 014101 (2016).
- Shekhter, C. Uzan-Saguy, J. Schubert, Y. Amouyal, and M. Eizenberg, "Experimental and computational study of zero dimensional metallic behavior at the LaLuO3/SrTiO3 interface", J. Vac. Sci. Technol. B 34, 021204 (2016).
- Shekhter, A. R. Chaudhuri, A. Laha, S. Yehezkel, A. Shriki, H. J. Osten, and M. Eizenberg, "The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric", Appl. Phys. Lett. 105, 262901 (2014).
- Shekhter, F. Palumbo, K. Cohen Weinfeld and M. Eizenberg, "X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks", Appl. Phys. Lett. 105, 102908 (2014).
- Shekhter, S. Mehari, D. Ritter and M. Eizenberg, "Epitaxial NiInGaAs Formed by Solid State Reaction on In0.53Ga0.47As: Structural and Chemical Study", J. Vac. Sci. Technol. B 31, 031205 (2013).
- Shekhter,
L. Kornblum, Z. Liu, S. Cui, T. P. Ma and M. Eizenberg, "Effect of Hydrogen on the Chemical Bonding and Band Structure at the Al2O3/In0.53Ga0.47As Interface", Appl. Phys. Lett.99, 232103 (2011).
Dr. Pini Shekhter holds a BSc’s in both chemistry and materials engineering from the Technion as well as a PhD in materials engineering from the Technion.
