Future Capability
The new equipment coming soon to TAU CCNS
At the TAU Nanocenter, we continuously advance our research and fabrication capabilities by acquiring state-of-the-art tools to meet the evolving needs of cutting-edge nanotechnology.
With recent investments in advanced deposition, etching, and wafer processing equipment, we can offer a wider range of high-precision processes.
These new tools enable our researchers and partners to push the boundaries of micro and nanofabrication, providing innovative solutions for applications in semiconductors, 3D integration, and beyond
|
Tool Name |
Process |
Application / Description |
Specifications |
Additional Notes |
|---|---|---|---|---|
| CORIAL 210 ICP-CVD | Deposition (CVD) | Deposits thin films of device-grade quality; ideal for hydrogenated amorphous silicon (a-Si) and various silicon compounds. | Low-temp deposition (<200°C); Conformal coating of trenches and vias with high aspect ratios; equipped with vacuum load lock. | Complementary to PECVD system, enabling lift-off processes. |
| CORIAL 210 IL-187 ICP-RIE | Dry Etching (RIE) | High-density plasma for etching metals (e.g., Al, Ti, Au), metal oxides, and semiconductor compounds | Supports corrosive plasma chemistries, stable etch rates, excellent uniformity, deep substrate etch (DSE) capabilities. | Uses halogen-based plasmas for selective chemical dry etching. |
| CORIAL 210 IL-189 ICP-RIE | Dry Etching (RIE) | Primarily for etching silicon oxides, oxide glasses, and silicon nitrides using fluorine-oxygen-based plasmas. | Configured similarly to IL-187 but uses gases like SF6, CF4, and CHF3 for oxide etching. | |
| EVATEC BAK501 E-Gun Evaporator | Deposition (PVD) | Multilayer deposition of metals and dielectric layers, optimized for lift-off and low-damage deposition. | Large substrate-source distance, 8-pocket e-gun, base pressure <2×10^-7 mBar, automation, ion-assisted deposition. | Deposits metals like Al, Cu, Au, and reactive oxides. |
| VST Multifunction PVD System TFDS 6400 | Deposition (PVD) | E-gun evaporation and magnetron sputtering for metals and dielectric layers. | 6” water-cooled holder, 5 magnetron sources for co-sputtering, 3 gas lines, cryogenic vacuum pump, and full automation. | Upgraded version of older VST e-gun evaporator and Penta sputter systems. |
| Disco DAG810 Surface Grinder | Surface Grinding | Wafer thinning, fabrication of Through Strata Vertical interconnects (TSVs) for 3D integration (3DI) applications. | Handles workpieces up to 200 mm, fixed abrasive grinding, surface roughness <10 nm, ultra-precise grinding results. | Supports extreme wafer thinning for 3DI technologies (stacked wafers, SiP systems). |
|
KLA P17 Mechanical Profilometer |
Metrology | Offers step height measurement capability for steps from a few nanometers to one millimeter. Supports 2D and 3D measurements of step heights, roughness, bow, and stress. |
Enables scans up to 200 mm without stitching; suitable for detailed surface characterization. |
|
| VERSALINE™ LLH-DSE-III | Etching/Deposition | Configured to perform an array of etch and deposition processes. Ion beam technology suits a range of applications, from low-damage etching to deep silicon etching. | Supports high-rate, high-aspect-ratio processes for challenging materials; controllable damage etching and deep silicon structuring. | |
| Leica CPD 300 | Sample Preparation | Critical point drying system for preparing delicate samples for SEM. Preserves surface structure by avoiding damage from surface tension during drying. | Efficient transition from liquid to gaseous phase; protects fragile nanostructures during SEM preparation. | |



