Future Capability
The new equipment coming soon to TAU CCNS
At the TAU Nanocenter, we continuously advance our research and fabrication capabilities by acquiring state-of-the-art tools to meet the evolving needs of cutting-edge nanotechnology.
With recent investments in advanced deposition, etching, and wafer processing equipment, we can offer a wider range of high-precision processes.
These new tools enable our researchers and partners to push the boundaries of micro and nanofabrication, providing innovative solutions for applications in semiconductors, 3D integration, and beyond
Tool Name |
Process |
Application / Description |
Specifications |
Additional Notes |
---|---|---|---|---|
CORIAL 210 ICP-CVD | Deposition (CVD) | Deposits thin films of device-grade quality; ideal for hydrogenated amorphous silicon (a-Si) and various silicon compounds. | Low-temp deposition (<200°C); Conformal coating of trenches and vias with high aspect ratios; equipped with vacuum load lock. | Complementary to PECVD system, enabling lift-off processes. |
CORIAL 210 IL-187 ICP-RIE | Dry Etching (RIE) | High-density plasma for etching metals (e.g., Al, Ti, Au), metal oxides, and semiconductor compounds | Supports corrosive plasma chemistries, stable etch rates, excellent uniformity, deep substrate etch (DSE) capabilities. | Uses halogen-based plasmas for selective chemical dry etching. |
CORIAL 210 IL-189 ICP-RIE | Dry Etching (RIE) | Primarily for etching silicon oxides, oxide glasses, and silicon nitrides using fluorine-oxygen-based plasmas. | Configured similarly to IL-187 but uses gases like SF6, CF4, and CHF3 for oxide etching. | |
EVATEC BAK501 E-Gun Evaporator | Deposition (PVD) | Multilayer deposition of metals and dielectric layers, optimized for lift-off and low-damage deposition. | Large substrate-source distance, 8-pocket e-gun, base pressure <2×10^-7 mBar, automation, ion-assisted deposition. | Deposits metals like Al, Cu, Au, and reactive oxides. |
VST Multifunction PVD System TFDS 6400 | Deposition (PVD) | E-gun evaporation and magnetron sputtering for metals and dielectric layers. | 6” water-cooled holder, 5 magnetron sources for co-sputtering, 3 gas lines, cryogenic vacuum pump, and full automation. | Upgraded version of older VST e-gun evaporator and Penta sputter systems. |
Disco DAG810 Surface Grinder | Surface Grinding | Wafer thinning, fabrication of Through Strata Vertical interconnects (TSVs) for 3D integration (3DI) applications. | Handles workpieces up to 200 mm, fixed abrasive grinding, surface roughness <10 nm, ultra-precise grinding results. | Supports extreme wafer thinning for 3DI technologies (stacked wafers, SiP systems). |
KLA P17 Mechanical Profilometer |
Metrology | Offers step height measurement capability for steps from a few nanometers to one millimeter. Supports 2D and 3D measurements of step heights, roughness, bow, and stress. |
Enables scans up to 200 mm without stitching; suitable for detailed surface characterization. |
|
VERSALINE™ LLH-DSE-III | Etching/Deposition | Configured to perform an array of etch and deposition processes. Ion beam technology suits a range of applications, from low-damage etching to deep silicon etching. | Supports high-rate, high-aspect-ratio processes for challenging materials; controllable damage etching and deep silicon structuring. | |
Leica CPD 300 | Sample Preparation | Critical point drying system for preparing delicate samples for SEM. Preserves surface structure by avoiding damage from surface tension during drying. | Efficient transition from liquid to gaseous phase; protects fragile nanostructures during SEM preparation. | |