ALD Beneq

ALD Beneq
ALD Beneq

Manufacturer and model:




Atomic layer deposition is a chemical gas phase thin film deposition method based on sequential, self-saturating surface reactions. Using ALD, compared to sputter or evaporation, enables ultra fine thickness-controlled growth of the desired material by alternatively pulsing the source gases.

For growth of thin conformal layers with thickness control down to atomic precision (~ 3Å).



Pt, AlN, Al2O3, TaN, TiN, ZnO, TiO2, Ta2O5, HfO2 .



  • Up to 6‘’ wafers.
  • Load lock.
  • Precursors Ti, Al, Pt, Hf, Zn, Ta.
  • Plasma gases Ar, O2, N2, NH3, H2.
  • Typical deposition rate: 1 Å/cycle for Al2O3 and  0.5 Å/cycle for TiO2.


Clean Room, Nano center building.


Tool Owner:

Inna Shechtman (


Tool Trainer:

Lev Rovinsky (

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