ALD Beneq

Manufacturer and model:

BENEQ TFS 200.

Description:

Atomic layer deposition is a chemical gas phase thin film deposition method based on sequential, self-saturating surface reactions. Using ALD, compared to sputter or evaporation, enables ultra fine thickness-controlled growth of the desired material by alternatively pulsing the source gases.

For growth of thin conformal layers with thickness control down to atomic precision (~ 3Å).

Materials: 

Pt, AlN, Al2O3, TaN, TiN, ZnO, TiO2, Ta2O5, HfO2 .

Specification:

• Up to 6‘’ wafers.
• Load lock.
• Precursors Ti, Al, Pt, Hf, Zn, Ta.
• Plasma gases Ar, O2, N2, NH3, H2.
• Typical deposition rate: 1 Å/cycle for Al2O3 and  0.5 Å/cycle for TiO2.

​Location:

Clean Room, Nano center building.

Tool Owner:

Inna Shechtman (innas@tauex.tau.ac.il).

Tool Trainer:

Lev Rovinsky (levrovinsky@mail.tau.ac.il).