PECVD PlasmTherm

Manufacturer and model:

Plasma Enhanced CVD – PlasmaTh SLR790.

Description:

Plasma enhanced chemical vapor deposition providing low stressed silicon nitride, silicon dioxide and silicon oxynitride thin films.

Materials: 

SiO2 and SiNx.

Specification:

• Up to 8‘’ wafers.
• No load lock.
• Max temperature 350˚C.
• Base pressure 10x10-3 Torr.

​Location:

Engineering Cleanroom, Wolfson building of Electrical Engineering.

Tool Owner:

Sergio Bloch (csebta@tauex.tau.ac.il).

Tool Trainer:

Lev Rovinsky (levrovinsky@mail.tau.ac.il).