ALD Beneq

ALD Beneq
ALD Beneq

 

  • Up to 6‘’ wafers.
  • Load lock.
  • Precursors Ti, Al, Pt, Hf, Zn, Ta.
  • Plasma gases Ar, O2, N2, NH3, H2.
  • Typical deposition rate: 1 Å/cycle for Al2O3 and  0.5 Å/cycle for TiO2.
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