ALD Beneq
- Maximum substrate size: Up to 6-inch wafers
- Available precursors: Trimethylaluminum (TMA) and titanium tetrachloride (TiCl₄)
- Available plasma gases: Ar, O₂, N₂, NH₃, and H₂
- Supported materials: Al₂O₃, TiO₂, AlN, TiN
- Typical deposition rates:
- Al₂O₃: approximately 1 Å/cycle
- TiO₂: approximately 0.5 Å/cycle
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