RIE Oerlicon
- Etching gases: O2 (oxygen), Ar (argon), SF6 (sulfur hexafluoride), CF4 (tetrafluoromethane) and CHF3 (trifluoromethane).
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Anisotropic thin film etching.
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The typical etching rate of silicon is ~15 nm/min
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The typical etching rate of silicon oxide is ~25 nm/min.
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The typical etching rate of silicon nitride is 20 nm/min.
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